| PART |
Description |
Maker |
| KM44C4005C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
|
Samsung semiconductor
|
| KMM5368003BSWG KMM5368003BSW |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| MT4C4004 |
1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364003CK KMM5364103CK |
(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| K4S640432E-L1H K4S640432E-L75 K4S640432E-L1L K4S64 |
4M x 4Bit x 4 Banks Synchronous DRAM 4米4位4银行同步DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S640432E-TC K4S640432E K4S640432E-L1H K4S640432E |
4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM44S16020B |
8M x 4Bit x 2 Banks Synchronous DRAM(8M x 4x 2组同步动态RAM) 8米4位2银行同步DRAM米4位2组同步动态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| K4S280432M-TC_L80 K4S280432M K4S280432M-TC_L10 K4S |
MC 7P MR 16/1 PVC GOLD RoHS Compliant: Yes
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
